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Iron doped ZnO (Fe-ZnO) nanoparticles were synthesized using two techniques that are economical as well as scalable to yield tunable properties of nanoparticles for facilitating down conversion in an absorbing layer of a solar cell. To evaluate the suitability of Fe-ZnO nanoparticles prepared by two deposition methods, we present a comparison of optical, electrical, and structural properties of Fe-ZnO using several experimental techniques. Structural properties were analyzed using transmission electron microscopy and x-ray diffraction spectroscopy (XRD) with Rietveld analysis for extracting information on compositional variations with Fe doping. The chemical composition of nanoparticles was analyzed through X-ray photoelectron spectroscopy (XPS). The optical properties of nanoparticles were studied using photoluminescence and UV-Vis absorption spectroscopy. In addition, fluorescence lifetime measurement was also performed to study the changes in an exponential decay of lifetimes. The electrical transport properties of Fe-ZnO were analyzed by impedance spectroscopy. Our studies indicate that ethanol as a solvent in a microwave method would produce smaller nanoparticles up to the size of 11 nm. In contrast, the precipitation method produces secondary phases of Fe2O3 beyond 5% doping. In addition, our studies show that the optical and electrical properties of resulting Fe-ZnO nanoparticles depend on the particle sizes and the synthesis techniques used. These new results provide insight into the role of solvents in fabricating Fe-ZnO nanoparticles by precipitation and microwave methods for photovoltaic and other applications. 

Silica nanosprings (NS) were coated with gallium nitride (GaN) by high-temperature atomic layer deposition. The deposition temperature was 800 °C using trimethylgallium (TMG) as the Ga source and ammonia (NH3) as the reactive nitrogen source. The growth of GaN on silica nanosprings was compared with deposition of GaN thin films to elucidate the growth properties. The effects of buffer layers of aluminum nitride (AlN) and aluminum oxide (Al2O3) on the stoichiometry, chemical bonding, and morphology of GaN thin films were determined with X-ray photoelectron spectroscopy (XPS), high-resolution x-ray diffraction (HRXRD), and atomic force microscopy (AFM). Scanning and transmission electron microscopy of coated silica nanosprings were compared with corresponding data for the GaN thin films. As grown, GaN on NS is conformal and amorphous. Upon introducing buffer layers of Al2O3 or AlN or combinations thereof, GaN is nanocrystalline with an average crystallite size of 11.5 ± 0.5 nm. The electrical properties of the GaN coated NS depends on whether or not a buffer layer is present and the choice of the buffer layer. In addition, the IV curves of GaN coated NS and the thin films (TF) with corresponding buffer layers, or lack thereof, show similar characteristic features, which supports the conclusion that atomic layer deposition (ALD) of GaN thin films with and without buffer layers translates to 1D nanostructures. 

The effect of UV illumination on the room temperature electrical detection of ammonium nitrate vapor was examined. The sensor consists of a self-assembled ensemble of silica nanosprings coated with zinc oxide. UV illumination mitigates the baseline drift of the resistance relative to operation under dark conditions. It also lowers the baseline resistance of the sensor by 25% compared to dark conditions. At high ammonium nitrate concentrations (120 ppm), the recovery time after exposure is virtually identical with or without UV illumination. At low ammonium nitrate concentrations (20 ppm), UV illumination assists with refreshing of the sensor by stimulating analyte desorption, thereby enabling the sensor to return to its baseline resistance. Under dark conditions and low ammonium nitrate concentrations, residual analyte builds up with each exposure, which inhibits the sensor from returning to its original baseline resistance and subsequently impedes sensing due to permanent occupation of absorption sites.